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| MRF581 NPN SILICON RF TRANSISTOR DESCRIPTION: The MRF581 is Designed for High current low Power Amplifier Applications up to 1.0 GHz. PACKAGE STYLE Dim. Are in mm FEATURES: * Low Noise Figure * Low Intermodulation Distortion * High Gain * OmnigoldTM Metalization System MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG 200 mA 36 V 18 V 2.5 V 2.5 W @ TC = 25 C -65 C to +200 C -65 C to +200 C Leads 1 and 3 = Emitter 2 = Collector 4 = Base CHARACTERISTICS SYMBOL BVCBO BVCEO BVEBO IEBO ICBO hFE Ccb GP TC = 25 C NONETEST CONDITIONS IC = 1.0 mA IC = 1.0 mA IE = 100 A VEB = 2.0 V VCB = 15 V VCE = 5.0 V VCB = 10 V VCC = 10 V IC = 50 IC = 50 mA f = 1.0 MHz f = 0.5 GHz MINIMUM TYPICAL MAXIMUM 36 18 2.5 100 100 50 1.4 13 15.5 200 2.0 UNITS V V V A A --pF dB A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 |
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